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GaN基欧姆接触及AlGaN/GaNHEMT器件研究的开题报告 Title:StudyofGaN-basedOhmicContactsandAlGaN/GaNHEMTDevices Introduction: TheGaN-baseddeviceshaveattractedsignificantattentioninrecentyearsduetotheirhighelectronmobilityandhighbreakdownvoltage.TheAlGaN/GaNHEMT(HighElectronMobilityTransistor)isapromisingdeviceforhigh-frequency,high-powerapplications.However,theperformanceoftheAlGaN/GaNHEMTisstronglydependentonthequalityoftheohmiccontacts.Therefore,thestudyofGaN-basedohmiccontactsandAlGaN/GaNHEMTdevicesisofgreatimportanceforthedevelopmentofhigh-performanceelectronicdevices. Objectives: Theobjectivesofthisresearchare: 1.ToinvestigatethefabricationprocessandpropertiesofGaN-basedohmiccontacts. 2.TooptimizethedesignandperformanceofAlGaN/GaNHEMTdevices. Methodology: Theresearchwillbeconductedinthefollowingsteps: 1.FabricationofGaN-basedohmiccontacts:TheohmiccontactwillbefabricatedbydepositingametallayerontheGaN-basedsemiconductormaterial.Theelectricalandstructuralpropertiesofthecontactswillbecharacterizedusingvarioustechniques,suchastransmissionlinemeasurementsandatomicforcemicroscopy. 2.Devicesimulation:NumericalsimulationtoolswillbeusedtooptimizethedesignandperformanceofAlGaN/GaNHEMTdevices.Thesimulationwillbebasedonthephysicalmodelsofthedeviceproperties,suchastheelectronmobility,dopingconcentration,andmobilitydegradation. 3.FabricationofAlGaN/GaNHEMTdevices:Thedeviceswillbefabricatedusingstandardsemiconductorprocessingtechniques.Theelectricalpropertiesofthedevices,suchasthedraincurrent,gatevoltage,andoutputpower,willbecharacterizedusingstandardelectricalmeasurements. ExpectedResults: Theexpectedresultsofthisresearchare: 1.TheunderstandingofthefabricationprocessandpropertiesofGaN-basedohmiccontacts. 2.TheoptimizationofthedesignandperformanceofAlGaN/GaNHEMTdevices. 3.ThedevelopmentofimprovedGaN-baseddevicesforhigh-frequencyandhigh-powerapplications. Conclusion: ThestudyofGaN-basedohmiccontactsandAlGaN/GaNHEMTdevicesisofgreatimportanceforthedevelopmentofhigh-performanceelectronicdevices.Thisr