Si基稀磁半导体薄膜的磁性研究的开题报告.docx

Mn掺杂Ge/Si基稀磁半导体薄膜的磁性研究的开题报告
摘要：
稀磁半导体材料在磁电子学领域中具有重要应用价值。本文研究Mn掺杂Ge/Si基稀磁半导体薄膜的磁性质。采用分子束外延技术制备Mn掺杂Ge/Si基薄膜。通过X射线衍射、扫描电镜、拉曼光谱等手段对其结构和形貌进行表征。利用霍尔效应和磁性测量系统测量其电学和磁学性质。
研究发现，Mn掺杂Ge薄膜的晶格常数略微增加，Si基薄膜的晶格常数几乎不变，表明Mn掺杂主要影响了Ge薄膜的晶格结构。薄膜中形成了Mn离子的磁性电子态，随着Mn掺杂浓度的增加，磁矩增强，磁滞回线出现。同时，随着温度的升高，薄膜的顺磁相对于铁磁的贡献增加，使得磁性越来越弱。
本研究对于稀磁半导体材料的加工与磁性质理解提供了一定的参考意义。
关键词：稀磁半导体，Mn掺杂，霍尔效应，磁性测量
Abstract:
Rare-earthmagneticsemiconductormaterialshavegreatpotentialinthefieldofmagnetoelectronics.ThispaperstudiesthemagneticpropertiesofMn-dopedGe/Si-basedrare-earthmagneticsemiconductorthinfilms.Mn-dopedGe/Si-basedthinfilmswerepreparedbymolecularbeamepitaxy.ThestructureandmorphologywerecharacterizedbyX-raydiffraction,scanningelectronmicroscopy,Ramanspectroscopy,etc.TheelectricalandmagneticpropertiesweremeasuredusingHalleffectandmagneticmeasurementsystem.
TheresultsshowthatthelatticeconstantofMn-dopedGefilmslightlyincreases,whilethelatticeconstantofSi-basedfilmremainsalmostunchanged,indicatingthatMndopingmainlyaffectsthelatticestructureofGefilm.MagneticelectronstatesofMnionsareformedinthefilm,andwiththeincreaseofMndopingconcentration,themagneticmomentisenhanced,andthehysteresisloopappears.Atthesametime,withtheincreaseoftemperature,theparamagneticcontributionofthefilmrelativetoferromagneticisincreased,whichmakesthemagneticpropertyweakerandweaker.
Thisresearchprovidesreferencefortheprocessingandmagneticpropertiesunderstandingofrare-earthmagneticsemiconductormaterials.
Keywords:rare-earthmagneticsemiconductor,Mndoping,Halleffect,magneticmeasurement