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GaN基气体传感器制备及性质研究的中期报告 摘要: 本文主要介绍了制备GaN基气体传感器的过程和性质研究的初步结果。首先,采用金属有机分解法在Si(111)衬底上制备了GaN薄膜,并通过XRD、SEM、EDX等手段对其进行了表征。其次,利用电子束蒸发技术制备了电极,进一步制备了GaN基气体传感器,并通过I-V测试和氨气敏感测试评估了其性能。实验结果表明,制备的GaN薄膜为高晶质、均匀的多晶态结构,GaN基气体传感器具有优良的I-V特性和较高的氨气敏感性能。未来,我们将继续对其性能进行优化和加强其应用前景的研究。 关键词:GaN基;气体传感器;制备;性质研究 Abstract: ThispapermainlyintroducestheprocessofpreparingGaN-basedgassensorsandthepreliminaryresultsofpropertyresearch.First,GaNthinfilmswerepreparedonSi(111)substratebymetalorganicdecompositionmethod,andcharacterizedbyXRD,SEM,EDXandothermeans.Secondly,electrodeswerepreparedbyelectronbeamevaporationtechnology,andthenGaN-basedgassensorswereprepared.TheperformanceofthesensorswasevaluatedbyI-Vtestandammoniagassensitivitytest.TheexperimentalresultsshowedthatthepreparedGaNthinfilmhadahighcrystallinityanduniformpolycrystallinestructure,andtheGaN-basedgassensorhadexcellentI-Vcharacteristicsandhighammoniagassensitivity.Inthefuture,wewillcontinuetooptimizeitsperformanceandstrengthenitsapplicationprospects. Keywords:GaN-based;gassensor;preparation;propertyresearch