DTS3401A品牌授权规格书.pdf

DT6$

P-Channel30-V(D-S)MOSFET

FEATURES
PRODUCTSUMMARY
•Halogen-freeAccordingtoIEC61249-2-21
a,e
VDS(V)RDS(on)(Ω)ID(A)Qg(Typ.)Definition
®
0.053atVGS=-10V-5.6•TrenchFETPowerMOSFET
-307nC•100%RTested
0.070atV=-4.5V-4.6g
GS•ComplianttoRoHSDirective2002/95/EC

APPLICATIONS
•LoadSwitch
TO-236•NotebookAdaptorSwitch
(SOT-23)•DC/DCConverter

S
G1

3D

S2G

TopView
DTS3401A
D
P-ChannelMOSFET

ABSOLUTEMAXIMUMRATINGSTA=25°C,unlessotherwisenoted
ParameterSymbolLimitUnit
Drain-SourceVoltageV-30
DSV
Gate-SourceVoltageVGS±20

TC=25°C-5.6
T=70°C-4.7
ContinuousDrainCurrent(T=150°C)CI
JDb,c
TA=25°C-4.2
b,c
TA=70°C-3.3A
PulsedDrainCurrentIDM-25
T=25°C-2.1
ContinousSource-DrainDiodeCurrentCI
Sb,c
TA=25°C-1
TC=25°C2.5
T=70°C1.6
MaximumPowerDissipationCPW
Db,c
TA=25°C1.25
b,c
TA=70°C0.8

OperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150°C

THERMALRESISTANCERATINGS
ParameterSymbolTypicalMaximumUnit
MaximumJunction-to-Ambientb,dt≤5sR75100
thJA°C/W
MaximumJunction-to-Foot(Drain)SteadyStateRthJF4050
Notes:
a.BasedonTC=25°C.
b.SurfaceMountedon1"x1"FR4board.
c.t=5s.
d.MaximumunderSteadyStateconditionsis166°C/W.
e.PackageLimited.

1

DT6$

SPECIFICATIONSTJ=25°C,unlessotherwisenoted
ParameterSymbolTestConditionsMin.Typ.Max.Unit
Static

Drain-SourceBreakdownVoltageVDSVGS=0V,ID=-250µA-30V

VDSTemperatureCoefficientΔVDS/TJ-19
ID=-250µAmV/°C
VGS(th)TemperatureCoefficientΔVGS(th)/TJ4.4

Gate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=-250µA-1.2-2.5V

Gate-SourceLeakageIGSSVDS=0V,VGS=±20V±100nA

VDS=-30V,VGS=0V-1
ZeroGateVoltageDrainCurrentIDSSµA
VDS=-30V,VGS=0V,TJ=55°C-5
a
On-StateDrainCurrentID(on)VDS≤-5V,VGS=-10V-25A
V=-10V,I=-4.2A0.0370.053
aGSD
Drain-SourceOn-StateResistanceRDS(on)Ω
VGS=-4.5V,ID=-3.2A0.0620.070
a
ForwardTransconductancegfsVDS=-15V,ID=-4.2A10S
Dynamicb

InputCapacitanceCiss590

OutputCapacitanceCossVDS=-15V,VGS=0V,f=1MHz115pF

ReverseTransferCapacitanceCrss93

VDS=-15V,VGS=-10V,ID=-4.2A13.621
TotalGateChargeQg
711
nC
Gate-SourceChargeQgsVDS=-15V,VGS=-4.5V,