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SmartGrid智能电网20177(2)79-88PublishedOnlineApril2017inHans.http://www.hanspub.org/journal/sghttps://doi.org/10.12677/sg.2017.72009ResearchonDrivingCharacteristicsofGaNPowerDevicesWuyangLiuShengweiGaoTianjinKeyLaboratoryofAdvancedTechnologyofElectricalEngineeringandEnergyTianjinPolytechnicUniversityTianjinReceived:Apr.11th2017;accepted:Apr.27th2017;published:Apr.30th2017AbstractThedevelopmenttrendofmodernswitchingpowersupplyishighefficiencyandhighpowerden-sity.ThepowerdeviceperformanceoftraditionalSimaterialhasbecomethebottleneckandGaNpowerdevicesofwidebandgapsemiconductordeviceshaveasmallerturn-onresistanceandcanwithstandhigherswitchingfrequencycomparingwiththeSiMOSFET.TakingGS66052BofGaNSystemforexamplethispaperanalyzedthedynamiccharacteristicsofmonomerenhancedGaNpowerdevicesthroughthedoublepulsetestanddesignedtheLM5114drivingcircuitbasedonsingletubeandabsorbedthehighvoltagespikesthroughparametercalculationwithRCsnubbercircuit.TheexperimentalresultsshowthattheGaNpowerdeviceshavegoodperformanceunderthehighfrequencyandload.KeywordsGaNDynamicCharacteristicsIndependentPullIrrigationPeakVoltage氮化镓功率器件驱动特性的研究刘武扬高圣伟天津工业大学电工电能新技术天津市重点实验室天津收稿日期:2017年4月11日;录用日期:2017年4月27日;发布日期:2017年4月30日