SiC薄膜的SSMBE外延生长及其结构表征的开题报告.docx

SiC薄膜的SSMBE外延生长及其结构表征的开题报告摘要：SiC材料具有优异的高温、高功率与高频特性，被广泛应用于微波、功率电子器件、半导体照明、太阳能电池等领域。然而，由于SiC材料本身的内在特性，以及制备过程中的多种因素，使得SiC薄膜的制备技术仍有待提高。本文将研究使用分子束外延（SSMBE）技术制备SiC薄膜的方法及其结构表征。在外延生长过程中，我们将通过调节温度、气压、流量等参数，控制薄膜的生长速率和质量。同时，使用X射线衍射仪、扫描电子显微镜、拉曼光谱仪等多种手段进行对其结构和性质的表征，评估薄膜品质与适用性。预期成果为：（1）建立SiC薄膜的SSMBE微晶生长技术；（2）开展面向硅生产的半绝缘和N型SiC外延薄膜生长技术；（3）获得表征薄膜品质和物性的关键技术。关键词：SiC薄膜；分子束外延（SSMBE）；生长技术；结构表征Abstract:SiCmaterialhasexcellenthightemperature,highpowerandhighfrequencycharacteristics,andiswidelyusedinmicrowave,powerelectronicdevices,semiconductorlighting,solarcellsandotherfields.However,duetotheintrinsicpropertiesofSiCmaterialandvariousfactorsinthepreparationprocess,thepreparationtechnologyofSiCfilmstillneedstobeimproved.ThispaperwillstudythemethodofpreparingSiCfilmusingmolecularbeamepitaxy(SSMBE)technologyanditsstructurecharacterization.Intheepitaxialgrowthprocess,wewillcontrolthegrowthrateandqualityofthefilmbyadjustingparameterssuchastemperature,pressure,andflowrate.Atthesametime,wewilluseX-raydiffractometer,scanningelectronmicroscope,Ramanspectrometerandothermethodstocharacterizeitsstructureandproperties,andevaluatethequalityandapplicabilityofthefilm.Theexpectedresultsare:(1)establishtheSSMBEmicrocrystalgrowthtechnologyofSiCfilm;(2)developthegrowthtechnologyofsemi-insulatingandN-typeSiCepitaxialfilmforsiliconproduction;(3)obtainkeytechnologiesforcharacterizingthequalityandphysicalpropertiesoffilms.Keywords:SiCfilm;molecularbeamepitaxy(SSMBE);growthtechnology;structurecharacterization.