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异质结电池表面钝化的研究.docx

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异质结电池表面钝化的研究异质结电池表面钝化的研究SURFACEPASSIVATIONOFMULTI-SIFORHETEROJUNCTIONSOLARCELLS?A.S.Asha*,M.Canino*,C.Summonte*,S.Binetti,M.Acciarri?,J.Libal?,D.Cavalcoli?,A.Cavallini?*CNR-IMM–viaGobetti101–40129Bologna–Italy?UniversitàMilanoBicocca–Milano,Italy?Physics.Dept,UniversityofBologna,vialeCBertiPichat6/III-40127Bologna,ItalyABSTRACT:Westudiedthepassivationeffectofplasmadepositedintrinsicanddopedhydrogenatedamorphoussiliconlayersonindustrialgrade,n-type,1??cmmulticrystallinesilicon,aimedatthefabricationofHeterojunction(HJ)solarcellsbasedonsuchmaterial.Theinvestigatedvariablesincludetheprocesstemperature,hydrogendilutionofsilaneduringtheintrinsiclayerdeposition,andpassivatinglayerthickness.Thestructureofthepassivatinglayerswasanalysedbyopticalmeasurements.Surfacephotovoltageandquasi-steadystatephotoconductancewereusedtocharacterizeuntreatedandtreatedwafers.Thina-Si:Hlayersexhibitedthebestpassivatingperformance.Keywords:Heterojunction,MulticrystallineSilicon,Passivation.1INTRODUCTIONTheapplicationoftheheterojunction(HJ)schemetomulticrystallinesiliconcombinesseveraladvantagesoverothertechnologiesand/orsubstrates,thatspanfrommoderatecostofthesubstrate,lowtemperatureprocessing,compatibilitywiththinsubstrates,reducedfabricationtime,efficiencyinthemedium-highrangeforcrystallinesilicon,relativematurenessofthetechnologythatmakesitanappealingcandidateforshorttermtransfertoproduction.Inparticular,themedium-highefficiencyrangeisstrictlylinkedtothepossibilityofobtainingefficientsurfaceandgrainboundarypassivation,whichhasindeedrecentlyraisedmulticrystallinesilicontocompetewiththemorecostlymonocrystallinesiliconsubstate[1].Weanalysedthepassivatingpropertiesofathinintrinsic(amorphousorepitaxial)layerplacedbetweenthebulkbaseandtheemitter,withrespecttoitsthicknessanddepositiontemperature.ThetransportmechanismsofanHJdevicefabricatedbyemployingsuchatechnologywerestudiedbydarkJ-Vmeasurements.2EXPERIMENTALThematerialusedforthisstudyisindustrialgrade,n-type,1??cm,300?mthickmulticrystallinesilic